AN SEU TOLERANT MEMORY CELL DERIVED FROM FUNDAMENTAL-STUDIES OF SEU MECHANISMS IN SRAM

被引：32

作者：

WEAVER, HT

AXNESS, CL

MCBRAYER, JD

BROWNING, JS

FU, JS

OCHOA, A

KOGA, R

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1281 / 1286

页数：6

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