IMPROVING THE NON-QUASI-STATIC WEAK-TO-STRONG-INVERSION 4-TERMINAL MOSFET MODEL

被引：0
作者：
BAGHERI, M
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 12期
关键词：
D O I：
10.1109/T-ED.1987.23349
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2558 / 2560
页数：3
相关论文
共 8 条
[1]   A SMALL-SIGNAL DC-TO-HIGH-FREQUENCY NONQUASISTATIC MODEL FOR THE 4-TERMINAL MOSFET VALID IN ALL REGIONS OF OPERATION [J].
BAGHERI, M ;
TSIVIDIS, Y .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (11) :2383-2391
[2]   CHARGE-SHEET MODEL OF MOSFET [J].
BREWS, JR .
SOLID-STATE ELECTRONICS, 1978, 21 (02) :345-355
[3]  
KLAASSEN FM, 1985, DESIGN MOS VLSI CIRC
[4]   ACCURATE LARGE-SIGNAL MOS TRANSISTOR MODEL FOR USE IN COMPUTER-AIDED DESIGN [J].
MERCKEL, G ;
BOREL, J ;
CUPCEA, NZ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) :681-+
[5]  
SZE SM, 1981, PHYSICS SEMICONDUCTO
[6]  
Tsividis Y., 2011, OPERATION MODELING M, V4
[7]  
TURCHETTI C, 1986, IEEE J SOLID STATE C, V21
[8]  
Ward DE, 1981, G20111 STANF U INT C
1