TRANSPORT PROPERTIES OF ELECTRONS IN ENERGY-BAND TAILS

被引:83
作者
REDFIELD, D [1 ]
机构
[1] RCA LABS, PRINCETON, NJ 08540 USA
关键词
D O I
10.1080/00018737500101441
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:463 / 487
页数:25
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共 55 条
[21]   FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J].
MARSHALL, JM ;
MILLER, GR .
PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1151-1168
[22]   IMPURITY CONDUCTION AT LOW CONCENTRATIONS [J].
MILLER, A ;
ABRAHAMS, E .
PHYSICAL REVIEW, 1960, 120 (03) :745-755
[23]   BROADENING OF IMPURITY BANDS IN HEAVILY DOPED SEMICONDUCTORS [J].
MORGAN, TN .
PHYSICAL REVIEW, 1965, 139 (1A) :A343-&
[24]   METAL-INSULATOR TRANSITION IN EXTRINSIC SEMICONDUCTORS [J].
MOTT, NF .
ADVANCES IN PHYSICS, 1972, 21 (94) :785-823
[25]   CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&
[26]   CONDUCTION IN NON-CRYSTALLINE SYSTEMS .10. MOBILITY AND PERCOLATION EDGES [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1974, 29 (03) :613-639
[27]  
MOTT NF, 1971, ELECTRONIC PROCESSES
[28]  
Pollak M., 1972, Journal of Non-Crystalline Solids, V11, P1, DOI 10.1016/0022-3093(72)90304-3
[29]   LOW-FREQUENCY CONDUCTIVITY DUE TO HOPPING PROCESSES IN SILICON [J].
POLLAK, M ;
GEBALLE, TH .
PHYSICAL REVIEW, 1961, 122 (06) :1742-&
[30]  
POLLAK M, UNPUBLISHED