ETCHING OF YBA2CU3OY SURFACE BY SCANNING TUNNELING MICROSCOPE

被引：0
|
作者：
CHEN, S [1 ]
WANG, LM [1 ]
YANG, HC [1 ]
HORNG, HE [1 ]
机构：
[1] NATL TAIWAN NORMAL UNIV,DEPT PHYS,TAIPEI 117,TAIWAN
来源：
PHYSICA B | 1994年 / 194卷 / pt 1期
关键词：
D O I：
10.1016/0921-4526(94)90525-8
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report the controlled and systematic modification with scanning tunneling microscope (STM) of the surface in bilayer YBa2Cu3Oy/PrBa2Cu3Oy (120/960) films. The number in parenthesis refers to the thickness of each layer in units of Angstrom. The bias voltage of the tip was kept negative and was varied from - 600 to - 1200 mV. The tip was operated in a constant tunneling mode with 0.3 - 0.6 nA of tunneling current and the scanning rate was 1 Hz. Etching of the YBCO/PBCO (120/960) begins with a nucleation of holes and can be achieved by successive scanning a fixed area.
引用
收藏
页码：391 / 392
页数：2
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