MODE REFLECTIVITY OF TILTED MIRRORS IN SEMICONDUCTOR-LASERS WITH ETCHED FACETS

被引:38
作者
IGA, K
WAKAO, K
KUNIKANE, T
机构
来源
APPLIED OPTICS | 1981年 / 20卷 / 14期
关键词
D O I
10.1364/AO.20.002367
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:2367 / 2371
页数:5
相关论文
共 22 条
[1]  
Bessonov Yu. L., 1979, Soviet Journal of Quantum Electronics, V9, P243, DOI 10.1070/QE1979v009n02ABEH008753
[2]   GALNASP-INP STRIPE-GEOMETRY LASER WITH A REACTIVE-ION-ETCHED FACET [J].
COLDREN, LA ;
IGA, K ;
MILLER, BI ;
RENTSCHLER, JA .
APPLIED PHYSICS LETTERS, 1980, 37 (08) :681-683
[3]   SELECTIVELY ETCHED DIFFRACTION GRATINGS IN GAAS [J].
COMERFORD, L ;
ZORY, P .
APPLIED PHYSICS LETTERS, 1974, 25 (04) :208-210
[4]  
DOBKIN AS, 1970, SOV PHYS SEMICOND+, V4, P515
[5]   INTEGRATED GAAS-ALGAAS DOUBLE-HETEROSTRUCTURE LASERS [J].
HURWITZ, CE ;
ROSSI, JA ;
HSIEH, JJ ;
WOLFE, CM .
APPLIED PHYSICS LETTERS, 1975, 27 (04) :241-243
[6]   GAINASP-INP FACET LASERS WITH CHEMICALLY-ETCHED END MIRRORS [J].
IGA, K ;
KAMBAYASHI, T ;
WAKAO, K ;
SAKAMOTO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :2035-2034
[7]  
IGA K, 1980, DIGEST TOPICAL M INT
[8]  
IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470
[9]   LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M [J].
ITAYA, Y ;
SUEMATSU, Y ;
KATAYAMA, S ;
KISHINO, K ;
ARAI, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) :1795-1805
[10]  
ITO K, 1977, IEEE J QUANTUM ELECT, V13, P628