GETTERING RATES OF VARIOUS FAST-DIFFUSING METAL IMPURITIES AT ION-DAMAGED LAYERS ON SILICON

被引：66
作者：
BUCK, TM
HSIEH, CM
POATE, JM
PICKAR, KA
机构：
来源：
APPLIED PHYSICS LETTERS | 1972年 / 21卷 / 10期
关键词：
D O I：
10.1063/1.1654228
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：485 / &
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