ELECTRON WAVE REFLECTION BY MULTIQUANTUM BARRIER

被引：10
作者：
TAKAGI, T
KOYAMA, F
IGA, K
机构：
[1] Tokyo Institute of Technology, Midori-ku
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期
关键词：
ELECTRON WAVE REFLECTION; GAAS/ALGAAS; MULTIQUANTUM BARRIER; SUPERLATTICE; N-I-N TUNNELING DIODE; SEMICONDUCTOR LASER; POTENTIAL BARRIER;
D O I：
10.1143/JJAP.31.197
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
For the purpose of experimentally and quantitatively demonstrating the enhancement of electron wave reflection by a multiquantum barrier (MQB) consisting of multiple combinations of quarter-de Broglie-wavelength heterostacks, we have fabricated two types of n-GaAs/i-barrier/n-GaAs tunneling diodes with a bulk AlxGa1-xAs barrier and an AlxGa1-xAs/GaAs MQB. From the current-voltage characteristic at 77 K it has been clarified that electrons are well reflected by the MQB. The potential barrier height was virtually increased by the MQB, and is estimated to be about 80 meV, which is in good agreement with theoretical expectation.
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页码：197 / 200
页数：4
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