THE EFFECTS OF IONIZING-RADIATION ON POWER-MOSFET TERMINATION STRUCTURES

被引：18
作者：
DAVIS, KR
SCHRIMPF, RD
CELLIER, FE
GALLOWAY, KF
BURTON, DI
WHEATLEY, CF
机构：
[1] UNIV ARIZONA,DEPT ELECT & COMP ENGN,TUCSON,AZ 85721
[2] HARRIS SEMICOND CORP,MOUNTAINTOP,PA 18707
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 06期
关键词：
D O I：
10.1109/23.45411
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2104 / 2109
页数：6
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