EVIDENCE FOR INCLUSIONS IN RHODIUM DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS-LAYERS

被引：4

作者：

GUENAIS, B ^{[1
]}

GUIVARCH, A ^{[1
]}

CHAPLAIN, R ^{[1
]}

POUDOULEC, A ^{[1
]}

GUILLOT, G ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,PHYS MAT LAB,F-69621 VILLEURBANNE,FRANCE

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 01期

关键词：

D O I：

10.1016/0022-0248(89)90282-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：119 / 126

页数：8

共 14 条

[1] PROPERTIES OF INP DOPED WITH 4D IONS [J].

BREMOND, G ;

NOUAILHAT, A ;

GUILLOT, G ;

TOUDIC, Y ;

LAMBERT, B ;

GAUNEAU, M ;

COQUILLE, R ;

DEVEAUD, B .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1987, 2 (12) :772-778

[2] INSITU ELECTROCHEMICAL MONITORING AND CONTROL OF OXYGEN IN LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS [J].

CHANG, SC ;

MENG, GY ;

STEVENSON, DA .

JOURNAL OF CRYSTAL GROWTH, 1983, 62 (03) :465-474

[3] CHARACTERIZATION OF RU-DOPED INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (06) :704-706

[4]

EDINGTON JW, 1976, MONOGRAPHS PRACTICAL, V4

[5] INTERFACIAL REACTION AND SCHOTTKY-BARRIER BETWEEN PT AND GAAS [J].

FONTAINE, C ;

OKUMURA, T ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1404-1412

[6] THE LUMINESCENCE AT 0.795 EV FROM GAAS-NB - A ZEEMAN SPECTROSCOPY [J].

GABILLIET, S ;

THOMAS, V ;

PEYRADE, JP ;

BARRAU, J ;

BATES, CA .

PHYSICS LETTERS A, 1986, 119 (04) :197-199

[7]

GUERIN R, UNPUB

[8]

GUYOT P, 1972, METHODES TECHNIQUES

[9] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J].

MILLER, DL ;

ASBECK, PM .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :1816-1822

[10]

SECOUE M, 1987, THESIS U RENNES

← 1 2 →