20 NM WAVELENGTH TUNABLE SINGLEMODE PICOSECOND PULSE GENERATION AT 1.3-MU-M BY SELF-SEEDED GAIN-SWITCHED SEMICONDUCTOR-LASER

被引：56

作者：

SCHELL, M ^{[1
]}

HUHSE, D ^{[1
]}

WEBER, AG ^{[1
]}

FISCHBECK, G ^{[1
]}

BIMBERG, D ^{[1
]}

TARASOV, DS ^{[1
]}

GORBACHOV, AV ^{[1
]}

GARBUZOV, DZ ^{[1
]}

机构：

[1] AF IOFFE PHYSICOTECH INST,ST PETERSBURG,USSR

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 23期

关键词：

PULSE GENERATION; SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19921383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A back reflection of less than 0.25% of the monochromatised emitted power of a gain switched laser diode is shown to switch the laser from longitudinal multimode to singlemode pulsed operation. The pulse shape (FWHM = 45 ps) is not affected by the feedback. A wavelength detuning of 20 nm with a sidemode suppression ratio better than 13 dB and a peak value of 22 dB were found from a simple experimental setup using a 9 : 1 fibre coupler and an external grating.

引用

页码：2154 / 2155

页数：2

共 8 条

[1] GENERATION OF SINGLE-MODE PICOSECOND PULSES BY INJECTION LOCKING OF AN ALGAAS SEMICONDUCTOR-LASER [J].