EPR IDENTIFICATION OF THE SINGLE-ACCEPTOR STATE OF INTERSTITIAL CARBON IN SILICON

被引：85

作者：

SONG, LW

WATKINS, GD

机构：

[1] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015

[2] LEHIGH UNIV,SHERMAN FAIRCHILD CTR SOLID STATE STUDIES,BETHLEHEM,PA 18015

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.42.5759

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the acceptor level at Ec-0.10 eV. The core structure of the defect is a 100 C-Si interstitialcy similar to that previously proposed for Ci+. The spin wave function is substantially more diffuse, however. © 1990 The American Physical Society.

引用

页码：5759 / 5764

页数：6

共 35 条

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