PROJECTIONS OF GAAS SOLAR-CELL PERFORMANCE LIMITS BASED ON TWO-DIMENSIONAL NUMERICAL-SIMULATION

被引:25
作者
DEMOULIN, PD
LUNDSTROM, MS
机构
关键词
D O I
10.1109/16.299671
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:897 / 905
页数:9
相关论文
共 39 条
[1]   ELECTRON-MOBILITY IN P-GAAS BY TIME OF FLIGHT [J].
AHRENKIEL, RK ;
DUNLAVY, DJ ;
GREENBERG, D ;
SCHLUPMANN, J ;
HAMAKER, HC ;
MACMILLAN, HF .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :776-778
[2]   COMPENSATION IN HEAVILY DOPED N-TYPE INP AND GAAS [J].
ANDERSON, DA ;
APSLEY, N ;
DAVIES, P ;
GILES, PL .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (08) :3059-3067
[3]  
[Anonymous], 1978, HETEROSTRUCTURE LASE
[4]   OPTICAL-PROPERTIES OF ALXGA1-XAS [J].
ASPNES, DE ;
KELSO, SM ;
LOGAN, RA ;
BHAT, R .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :754-767
[5]   SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].
BLAKEMORE, JS .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181
[6]   THE LIMITING EFFICIENCY OF SILICON SOLAR-CELLS UNDER CONCENTRATED SUNLIGHT [J].
CAMPBELL, P ;
GREEN, MA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) :234-239
[7]   EVIDENCE FOR BAND-GAP NARROWING EFFECTS IN BE-DOPED, P-P+ GAAS HOMOJUNCTION BARRIERS [J].
CHUANG, HL ;
DEMOULIN, PD ;
KLAUSMEIERBROWN, ME ;
MELLOCH, MR ;
LUNDSTROM, MS .
JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6361-6364
[8]   EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].
DAWSON, P ;
WOODBRIDGE, K .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1227-1229
[9]   MODELING OF MINORITY-CARRIER TRANSPORT IN HEAVILY DOPED SILICON EMITTERS [J].
DELALAMO, JA ;
SWANSON, RM .
SOLID-STATE ELECTRONICS, 1987, 30 (11) :1127-1136
[10]   INFLUENCE OF PERIMETER RECOMBINATION ON HIGH-EFFICIENCY GAAS P/N HETEROFACE SOLAR-CELLS [J].
DEMOULIN, PD ;
TOBIN, SP ;
LUNDSTROM, MS ;
CARPENTER, MS ;
MELLOCH, MR .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :368-370