ION-IMPLANTATION OF NEON IN SILICON FOR PLANAR AMORPHOUS ISOLATION

被引：4
作者：
YASAITIS, JA
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 15期
关键词：
D O I：
10.1049/el:19780310
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：460 / 462
页数：3
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