ION-IMPLANTATION OF NEON IN SILICON FOR PLANAR AMORPHOUS ISOLATION

被引：4
作者：
YASAITIS, JA
机构：
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 15期
关键词：
D O I：
10.1049/el:19780310
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：460 / 462
页数：3
相关论文
共 50 条
  • [31] ION-IMPLANTATION IN SILICON FILMS ON SAPPHIRE
    EKLUND, KH
    HOLMEN, G
    PETERSTROM, S
    APPLIED PHYSICS LETTERS, 1974, 24 (06) : 283 - 284
  • [32] RECENT DEVELOPMENTS IN ION-IMPLANTATION IN SILICON
    PALS, JA
    BROTHERTON, SD
    VANOMMEN, AH
    POLITIEK, J
    LIGTHART, HJ
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4): : 87 - 94
  • [33] SILICON PRODUCTION APPLICATIONS OF ION-IMPLANTATION
    SMITH, TC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1677 - 1682
  • [34] SILICON ON SAPPHIRE FOR ION-IMPLANTATION STUDIES
    GROSS, C
    PISCIOTT.BP
    SOLID STATE TECHNOLOGY, 1974, 17 (11) : 8 - 8
  • [35] PULSED ION-IMPLANTATION OF SILICON WITH SELENIUM
    SERFOZO, G
    NAUJOKAITIS, R
    KRAFCSIK, I
    DOZSA, L
    BATTISTIG, G
    RIEDL, P
    KLOPFER, E
    GERASIMENKO, NN
    GYULAI, J
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 74 - 79
  • [36] ON THE MECHANISM OF SILICON AMORPHIZATION BY ION-IMPLANTATION
    YARKULOV, U
    CRYSTAL LATTICE DEFECTS AND AMORPHOUS MATERIALS, 1987, 13 (3-4): : 305 - 313
  • [37] ION-IMPLANTATION OF IMPURITIES INTO POLYCRYSTALLINE SILICON
    KISIELEWICZ, M
    ZIELINSKASZOT, M
    ZUK, W
    ACTA PHYSICA POLONICA A, 1979, 56 (05) : 609 - 618
  • [38] ION-IMPLANTATION IN SILICON - RESEARCH AND APPLICATIONS
    MACRAE, AU
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 531 - 531
  • [39] ION-IMPLANTATION DOPING OF POLYCRYSTALLINE SILICON
    NORTH, JC
    ADAMS, AC
    RICHARDS, GF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (08) : C354 - C354
  • [40] SURFACE SOFTENING IN SILICON BY ION-IMPLANTATION
    BURNETT, PJ
    PAGE, TF
    JOURNAL OF MATERIALS SCIENCE, 1984, 19 (03) : 845 - 860
12345