ROLE OF PHOTOCURRENT IN LOW-TEMPERATURE PHOTOEMISSION-STUDIES OF SCHOTTKY-BARRIER FORMATION

被引：269

作者：

HECHT, MH

机构：

[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7918

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoelectron spectroscopy is frequently used to study band bending in semiconductors due to charge stored in surface or interface states. This paper examines how such experimental results are modified by photovoltages generated within the band-bending region not only by ambient light sources, but by the incident x rays themselves. Recent experiments which have suggested dopant-dependent and reversible temperature-dependent band bending in the initial stages of formation of the metal-GaAs(110) interface are used as an example. It is shown here that the reported dependence derives from a photovoltaic effect. © 1990 The American Physical Society.

引用

页码：7918 / 7921

页数：4

共 11 条

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