TEMPERATURE-DEPENDENCE OF BAND-GAP CHANGE IN INN AND ALN

被引：172

作者：

GUO, QX ^{[1
]}

YOSHIDA, A ^{[1
]}

机构：

[1] TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECTR ENGN,TOYOHASHI 441,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 5A期

关键词：

INN; ALN; SINGLE CRYSTAL; III-V SEMICONDUCTORS; OPTICAL BAND GAP; TEMPERATURE DEPENDENCE;

D O I：

10.1143/JJAP.33.2453

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical band gap of InN and AlN single crystal films was measured through absorption spectra in the temperature range of 4.2 to 300 K. The samples were grown on (0001)alpha-Al2O3 substrates by metalorganic vapor phase epitaxy. The Varshni equation and the Bose-Einstein expression have been compared with the experimental results. The nitride III-V compound semiconductors have smaller temperature dependence of band gap change. In III-V compound semiconductors, the variation of the band gap change increases in the order of N, P and As.

引用

页码：2453 / 2456

页数：4

共 26 条

[1]

AKASAKI I, 1992, MATER RES SOC SYMP P, V242, P383, DOI 10.1557/PROC-242-383

[2] OPTICAL-PROPERTIES OF ALUMINUM NITRIDE PREPARED BY CHEMICAL AND PLASMACHEMICAL VAPOR-DEPOSITION [J].

BAUER, J ;

BISTE, L ;

BOLZE, D .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01) :173-181

[3] BAND-STRUCTURE AND REFLECTIVITY OF GAN [J].

BLOOM, S ;

HARBEKE, G ;

MEIER, E ;

ORTENBUR.IB .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01) :161-168

[4]

CARDONA M, 1989, PROGR ELECTRON PROPE, P51

[5] PSEUDOPOTENTIAL BAND-STRUCTURE OF INDIUM NITRIDE [J].

FOLEY, CP ;

TANSLEY, TL .

PHYSICAL REVIEW B, 1986, 33 (02) :1430-1433

[6] ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].

JENKINS, DW ;

DOW, JD .

PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329

[7] TEMPERATURE-DEPENDENCE OF THE INTERBAND CRITICAL-POINT PARAMETERS OF INP [J].

LAUTENSCHLAGER, P ;

GARRIGA, M ;

CARDONA, M .

PHYSICAL REVIEW B, 1987, 36 (09) :4813-4820

[8]

MADELUNG O, 1982, LANDOLT BORNSTEIN GR, V17, P3

[9] TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP IN SEMICONDUCTORS [J].

MANOOGIAN, A ;

WOOLLEY, JC .

CANADIAN JOURNAL OF PHYSICS, 1984, 62 (03) :285-287

[10] EPITAXIAL-GROWTH OF ALUMINUM NITRIDE ON SAPPHIRE USING METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

MORITA, M ;

UESUGI, N ;

ISOGAI, S ;

TSUBOUCHI, K ;

MIKOSHIBA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) :17-23

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