NONLINEAR ELECTRICAL-TRANSPORT IN POROUS SILICON

被引：196
作者：
BENCHORIN, M
MOLLER, F
KOCH, F
机构：
[1] Technische Universität München, Physik-Department E16
来源：
PHYSICAL REVIEW B | 1994年 / 49卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.49.2981
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a study of the electrical transport in porous Si layers prepared by anodic etching of two different kinds of (100) p-type Si substrates. It is shown that by choosing a sufficiently thick layer, the problem of injection from the contacts can be eliminated. In this way we measure the intrinsic transport properties. The results suggest that a Poole-Frenkel type of mechanism accounts for the observed electric-field-enhanced conduction.
引用
收藏
页码：2981 / 2984
页数：4
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