PERFORMANCE CAPABILITIES OF HBT DEVICES AND CIRCUITS FOR SATELLITE COMMUNICATION

被引：10

作者：

FRICKE, K ^{[1
]}

GATTI, G ^{[1
]}

HARTNAGEL, HL ^{[1
]}

KROZER, V ^{[1
]}

WURFL, J ^{[1
]}

机构：

[1] EUROPEAN SPACE AGCY,EUROPEAN SPACE RES & TECHNOL CTR,2200 AG NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1992年 / 40卷 / 06期

关键词：

D O I：

10.1109/22.141353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the HBT performance with emphasis on its possible utilization in satellite power amplifiers. After recalling the requirements of satellite power amplifiers the suitability of HBT is discussed in depth including the output power capabilities, the realizable power-added efficiency and linearity, reliability considerations and circuit aspects. Models and simulation tools of HBT in power amplifiers are discussed and the results obtained so far are quoted. A comparison of realized HBT and various FET devices and circuits demonstrates that the HBT is a promising device for applications in satellite power amplifiers. The HBT will be a preferable device for microwave power amplification if the problems concerning the reliability can be solved and further investigations will be performed to obtain larger devices with higher rated output power.

引用

页码：1205 / 1214

页数：10

共 74 条

[61] DRAMATIC ENHANCEMENT IN THE GAIN OF A GAAS/ALGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR BY SURFACE CHEMICAL PASSIVATION [J].

SANDROFF, CJ ;

NOTTENBURG, RN ;

BISCHOFF, JC ;

BHAT, R .

APPLIED PHYSICS LETTERS, 1987, 51 (01) :33-35

[62]

SHIKATA S, 1990, 1990 P GALL ARS REL, P251

[63] ALGAAS/GE/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

STRITE, S ;

UNLU, MS ;

ADOMI, K ;

GAO, GB ;

MORKOC, H .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) :233-235

[64] ALGAAS/GAAS P-N-P HBTS WITH HIGH MAXIMUM FREQUENCY OF OSCILLATION [J].

SULLIVAN, GJ ;

CHANG, MF ;

SHENG, NH ;

ANDERSON, RJ ;

WANG, NL ;

WANG, KC ;

HIGGINS, JA ;

ASBECK, PM .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (10) :463-465

[65] MG-DOPED GRADED BASE GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

TEWS, H ;

ZWICKNAGL, P ;

NEUMANN, R ;

JAEGER, G ;

HOEPFNER, A ;

SCHLEICHER, L ;

PACKEISER, G .

ELECTRONICS LETTERS, 1990, 26 (01) :58-59

[66] SURFACE RECOMBINATION IN GAALAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS [J].

TIWARI, S ;

FRANK, DJ ;

WRIGHT, SL .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) :5009-5012

[67]

TIWARI S, IBM J RES DEV, V34, P550

[68] TRANSPORT-EQUATION APPROACH FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

TOMIZAWA, K ;

PAVLIDIS, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (03) :519-529

[69] HIGH-PERFORMANCE CARBON-DOPED BASE GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY MOCVD [J].

TWYNAM, JK ;

SATO, H ;

KINOSADA, T .

ELECTRONICS LETTERS, 1991, 27 (02) :141-142

[70] 500 MA AIGAASGAAS POWER HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

UNLU, MS ;

GAO, GB ;

WON, T ;

IYER, SV ;

CHEN, J ;

MORKOC, H .

ELECTRONICS LETTERS, 1989, 25 (21) :1447-1449

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