LASER MOLECULAR-BEAM EPITAXY OF SINGLE-CRYSTAL SRVO3-X FILMS

被引：14

作者：

NAGATA, H

TSUKAHARA, T

YOSHIMOTO, M

KOINUMA, H

机构：

[1] Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Midori-ku, Yokohama-shi, Kanagawa, 227

来源：

THIN SOLID FILMS | 1992年 / 208卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90654-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using ArF pulsed laser molecular beam epitaxy, SrVO3-x, epitaxial films were obtained on SrTiO3(001) substrates. During the deposition at 650-degrees-C, intensity oscillation of reflection high energy electron diffraction was clearly observed, suggesting that the film grew in a two-dimensional layer-by-layer mode with each layer thickness corresponding to the SrVO3 perovskite unit cell. The as-grown films were highly conductive and their resistivity decreased to 10(-5) S-1 cm with a temperature decrease from 300 to 5 K.

引用

页码：264 / 268

页数：5

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