ALUMINUM-OXIDES AS IMAGING MATERIALS FOR 193-NM EXCIMER LASER LITHOGRAPHY

被引：9

作者：

PANG, SW

KUNZ, RR

ROTHSCHILD, M

GOODMAN, RB

HORN, MW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 06期

关键词：

D O I：

10.1116/1.584503

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1624 / 1628

页数：5

共 10 条

[1] ION-BEAM-SPUTTERED ALOXNY ENCAPSULATING FILMS [J].

BIREY, H ;

PAK, SJ ;

SITES, JR ;

WAGER, JF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :2086-2089

[2] ENERGY DEPOSITION AT INSULATOR SURFACES BELOW THE ULTRAVIOLET PHOTOABLATION THRESHOLD [J].

DREYFUS, RW ;

MCDONALD, FA ;

VONGUTFELD, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05) :1521-1527

[3] LASER-INDUCED FLUORESCENCE STUDIES OF EXCIMER LASER ABLATION OF AL2O3 [J].

DREYFUS, RW ;

KELLY, R ;

WALKUP, RE .

APPLIED PHYSICS LETTERS, 1986, 49 (21) :1478-1480

[4] SUBMICROMETER PATTERNING BY PROJECTED EXCIMER-LASER-BEAM INDUCED CHEMISTRY [J].

EHRLICH, DJ ;

TSAO, JY ;

BOZLER, CO .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (01) :1-8

[5] PROPERTIES OF ALUMINUM-BASED CERMET THIN-FILM RESISTORS [J].

GUREV, H .

THIN SOLID FILMS, 1973, 18 (02) :275-285

[6] EFFECTS OF VACUUM DEPOSITION CONDITIONS ON ELLIPSOMETRIC PARAMETERS, OPTICAL-CONSTANTS, AND REFLECTANCE OF ULTRAPURE ALUMINUM FILMS [J].

HALFORD, JH ;

CHIN, FK ;

NORMAN, JE .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1973, 63 (07) :786-792

[7] CERMET AS AN INORGANIC RESIST FOR ION LITHOGRAPHY [J].

MELNGAILIS, J ;

EHRLICH, DJ ;

PANG, SW ;

RANDALL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01) :379-381

[8] A REVIEW OF EXCIMER LASER PROJECTION LITHOGRAPHY [J].

ROTHSCHILD, M ;

EHRLICH, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :1-17

[9] ION-BEAM ENHANCED DEPOSITION OF AINXOY ALLOYS ON INP [J].

SANTINELLI, C ;

BLANCHET, R ;

VIKTOROVITCH, P ;

BENYAHIA, F .

APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :69-75

[10] ANGULAR DISTRIBUTION OF SPUTTERED MATERIAL [J].

WEHNER, GK ;

ROSENBERG, D .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :177-179

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