X-RAY PHOTOEMISSION-STUDY OF THE INITIAL OXIDATION OF THE CLEAVED (110) SURFACES OF GAAS, GAP AND INSB

被引：36

作者：

IWASAKI, H

MIZOKAWA, Y

NISHITANI, R

NAKAMURA, S

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Suita, Osaka

来源：

SURFACE SCIENCE | 1979年 / 86卷 / JUL期

关键词：

D O I：

10.1016/0039-6028(79)90462-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The room temperature oxidation of GaAs, GaP and InSb upon exposure to atmospheric dry O2 has been studied by analyzing XP spectra quantitatively. The rate of oxidation decreases in the order InSb > GaP > GaAs. For GaAs and GaP, evidences of the formation of metastable surface complex are shown: the ratio of AIIIO bonds to BVO bonds are about 2 and 1, respectively. For InSb, it is shown that both elements are oxidized to comparable extent, giving rise to In2O3 and Sb2O3 probably, by using Auger spectra as well as photoemission spectra. © 1979.

引用

页码：811 / 818

页数：8

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