SPATIALLY RESOLVED LIFETIME MEASUREMENTS IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON

被引：9
作者：
DAMASKINOS, S
DIXON, AE
ROBERTS, GD
DAGG, IR
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期
关键词：
D O I：
10.1063/1.337258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1681 / 1688
页数：8
相关论文
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