PHOTOVOLTAIC EFFECT OF A METAL POROUS SILICON SILICON STRUCTURE

被引:17
作者
HAN, ZF [1 ]
SHI, JY [1 ]
TAO, H [1 ]
GONG, L [1 ]
FU, SJ [1 ]
SHI, CS [1 ]
ZHANG, XY [1 ]
机构
[1] USTC,DEPT PHYS,ANHUI 230026,PEOPLES R CHINA
关键词
D O I
10.1016/0375-9601(94)90351-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This Letter shows that MPS diodes are serially connected by a M/PS Schottky junction and a PS/P-Si heterojunction with a different photosensitivity. The Fermi level increases to nearly the center of the band gap during the conversion from P-Si to PS. The band gap diagram of a MPS diode is also presented.
引用
收藏
页码:265 / 268
页数:4
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