PHOTOVOLTAIC EFFECT OF A METAL POROUS SILICON SILICON STRUCTURE

被引：17

作者：

HAN, ZF ^{[1
]}

SHI, JY ^{[1
]}

TAO, H ^{[1
]}

GONG, L ^{[1
]}

FU, SJ ^{[1
]}

SHI, CS ^{[1
]}

ZHANG, XY ^{[1
]}

机构：

[1] USTC,DEPT PHYS,ANHUI 230026,PEOPLES R CHINA

来源：

PHYSICS LETTERS A | 1994年 / 186卷 / 03期

关键词：

D O I：

10.1016/0375-9601(94)90351-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This Letter shows that MPS diodes are serially connected by a M/PS Schottky junction and a PS/P-Si heterojunction with a different photosensitivity. The Fermi level increases to nearly the center of the band gap during the conversion from P-Si to PS. The band gap diagram of a MPS diode is also presented.

引用

页码：265 / 268

页数：4

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