HIGH-FREQUENCY PROPERTIES OF RESONANT TUNNELING DIODE

被引：8
作者：
SHENG, HY
SINKKONEN, J
机构：
[1] Electron Physics Laboratory, Helsinki University of Technology, SF-02150 Espoo
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1991年 / 9卷 / 04期
关键词：
D O I：
10.1016/0749-6036(91)90186-U
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The small signal analysis for the resonant tunneling diode (RTD) is carried out by using a semiclassical transport theory. Multiple scattering effects are accounted for in an optical approximation by using a complex mean free path. An analytical expression for the conduction current is given. The results show that the negative differential conductance prevails up to the frequency f0 limited by the quantum well transit time. The imaginary part of the admittance can be presented by a series inductance as has been recently found experimentally. In addition, the equivalent circuit has a capacitor in parallel with the conductance-inductance branch. Above f0 the admittance shows an oscillatory behaviour. The oscillations are associated with the quantum well transit time resonances. © 1991.
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页码：537 / 542
页数：6
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