SUBTHRESHOLD DRAIN LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS

被引：26
作者：
GOSNEY, WM
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1972年 / ED19卷 / 02期
关键词：
D O I：
10.1109/T-ED.1972.17399
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：213 / &
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