OBLIQUE ION-IMPLANTATION INTO NONPLANAR TARGETS

被引：0
作者：
TAKAI, M
NAMBA, S
RYSSEL, H
机构：
[1] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
[2] FRAUNHOFER ARBEITSGRP INTERGRIERTE SCHALTUNGEN,W-8520 ERLANGEN,GERMANY
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 59卷
关键词：
D O I：
10.1016/0168-583X(91)95779-D
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A two-dimensional Monte Carlo simulation code has been applied to trench implantation as a function of incident angle to investigate the influence of tapered sidewalls in Si trenches on doping uniformity and efficiency. Oblique implantation in trenches provides uniform concentration profiles of dopants at sidewalls, whereas nonuniform concentrations due to the reflection of ions at the sidewall are obtained in the trench bottom. A slightly tapered sidewall with an angle of 3-degrees results in higher doping efficiency by oblique implantation than vertical sidewalls.
引用
收藏
页码：1120 / 1123
页数：4
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