EPITAXIAL GROWTH OF SILICON AND GERMANIUM FILMS ON (111) SILICON SURFACES USING UHV SUBLIMATION AND EVAPORATION TECHNIQUES

被引：65

作者：

CULLIS, AG

BOOKER, GR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1971年 / 9卷 / 01期

关键词：

D O I：

10.1016/0022-0248(71)90220-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：132 / &

共 12 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].

ABBINK, HC ;

BROUDY, RM ;

MCCARTHY, GP .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&

[2]

BIONDI MA, 1960, AVS M CLEVELAND

[3] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .2. INITIAL GROWTH BEHAVIOUR ON CLEAN AND CARBON-CONTAMINATED SILICON SUBSTRATES [J].

BOOKER, GR ;

JOYCE, BA .

PHILOSOPHICAL MAGAZINE, 1966, 14 (128) :301-&

[4]

CULLIS AG, 1970, 7E P C INT MICR EL G, V2, P423

[5]

DITCHFIELD RW, 1970, 1 INT C EL MICR GREN, V2, P125

[6] HEATS OF FORMATION OF SOME UNSTABLE GASEOUS HYDRIDES [J].

GUNN, SR ;

GREEN, LG .

JOURNAL OF PHYSICAL CHEMISTRY, 1961, 65 (05) :779-&

[7] INFLUENCE OF SUBSTRATE SURFACE CONDITIONS ON NUCLEATION AND GROWTH OF EPITAXIAL SILICON FILMS [J].

JOYCE, BA ;

NEAVE, JH ;

WATTS, BE .

SURFACE SCIENCE, 1969, 15 (01) :1-&

[8] A STUDY OF NUCLEATION IN CHEMICALLY GROWN EPITAXIAL SILICON FILMS USING MOLECULAR BEAM TECHNIQUES .3. NUCLEATION RATE MEASUREMENTS AND EFFECT OF OXYGEN ON INITIAL GROWTH BEHAVIOUR [J].

JOYCE, BA ;

BRADLEY, RR ;

BOOKER, GR .

PHILOSOPHICAL MAGAZINE, 1967, 15 (138) :1167-&

[9] SATURATION DENSITY OF NUCLEI ON A SURFACE FROM MICROSCOPIC RATE EQUATIONS [J].

LOGAN, RM .

THIN SOLID FILMS, 1969, 3 (01) :59-&

[10]

MATTHEWS JW, 1963, C SINGLE CRYSTAL FIL, P165

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