OPTICAL SPECTROSCOPY OF SEMICONDUCTOR SURFACES

被引：6

作者：

DELSOLE, R

机构：

[1] Dipartimento di Fisica, II Università di Roma Tor Vergat, I-00173 Roma, Via O. Raimondo

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1990年 / 5卷 / 02期

关键词：

Semiconductor Materials;

D O I：

10.1016/0921-5107(90)90051-C

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The use of optical spectroscopy for the investigation of semiconductor surfaces is reviewed. Its sensitivity to the spectrum of surface states and/or to surface atomic structure is discussed. A comparison between theory and experiment is carried out for Si(111)2×1, Si(110), GaP(110) and GaAs(110). © 1990.

引用

页码：177 / 182

页数：6

共 35 条

[1] MEASUREMENTS OF ABOVE-BANDGAP OPTICAL ANISOTROPIES IN THE (001) SURFACE OF GAAS
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[6] BECHSTEDT F, IN PRESS J PHYS COND
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[J]. SOLID STATE COMMUNICATIONS, 1987, 64 (05) : 767 - 769
[9] SURFACE-STATES ON SI (111) 2 X 1 DETECTED BY EXTERNAL REFLECTIVITY
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