GATE-EDGE EFFECTS ON SPE REGROWTH FROM AS+-IMPLANTED SI

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1269 - 1271

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[5] SOLID-II - HIGH-VOLTAGE HIGH-GAIN KILO-ANGSTROM-CHANNEL-LENGTH CMOSFETS USING SILICIDE WITH SELF-ALIGNED ULTRASHALLOW (3S) JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 260 - 269

[6] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466

[7] TAMURA M, 1988, J APPL PHYS LETT, V52, P1210

[8] TAMURA M, 1972, JPN J APPL PHYS, V8, P1097

[1] ELIMINATION OF END-OF-RANGE AND MASK EDGE LATERAL DAMAGE IN GE+ PREAMORPHIZED, B+ IMPLANTED SI [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1269 - 1271

[2] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[3] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) : 4234 - 4240

[4] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[5] SOLID-II - HIGH-VOLTAGE HIGH-GAIN KILO-ANGSTROM-CHANNEL-LENGTH CMOSFETS USING SILICIDE WITH SELF-ALIGNED ULTRASHALLOW (3S) JUNCTION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (02) : 260 - 269

[6] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 461 - 466

[7] TAMURA M, 1988, J APPL PHYS LETT, V52, P1210

[8] TAMURA M, 1972, JPN J APPL PHYS, V8, P1097