POSSIBLE USE OF SLOW-NEUTRON SCATTERING FOR STUDY OF HEAVILY DOPED SEMICONDUCTORS

被引：0
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作者：
ANDRIANO.DG
TARASOV, LV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 2卷 / 06期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：660 / &
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