THERMODYNAMICS OF DEFECT FORMATION AND DEFECT INTERACTION IN COMPOUND SEMICONDUCTORS

被引：16

作者：

BULYARSKII, SV

OLEINIKOV, VP

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1988年 / 146卷 / 02期

关键词：

D O I：

10.1002/pssb.2221460204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：439 / 447

页数：9

共 12 条

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[9] IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT [J].

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[10]

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