INITIAL FORMATION OF THE INTERFACE BETWEEN A POLAR INSULATOR AND A NONPOLAR SEMICONDUCTOR - CAF2 ON SI(111)

被引：89

作者：

OLMSTEAD, MA

UHRBERG, RIG

BRINGANS, RD

BACHRACH, RZ

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1123 / 1127

页数：5

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