ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH

被引：21
作者：
BOUKERCHE, M
WIJEWARNASURIYA, PS
RENO, J
SOU, IK
FAURIE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 04期
关键词：
D O I：
10.1116/1.574029
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：2072 / 2076
页数：5
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