DIFFUSION-COEFFICIENT OF COBALT IN SILICON

被引：19
作者：
KITAGAWA, H [1 ]
HASHIMOTO, K [1 ]
机构：
[1] KYUSHU UNIV,FAC ENGN,DEPT ELECT ENGN,FUKUOKA 812,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 01期
关键词：
D O I：
10.1143/JJAP.16.173
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：173 / 174
页数：2
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[3]   DEEP DONOR STATE OF COBALT IN SILICON [J].
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[4]   THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT COBALT CENTERS IN SILICON [J].
YAU, LD ;
CHAN, WW ;
SAH, CT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 14 (02) :655-662
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