THE EFFECT OF UNIAXIAL STRAIN ON THE THRESHOLD CURRENT AND OUTPUT OF GAAS LASERS

被引：29

作者：

RYAN, FM

MILLER, RC

机构：

来源：

APPLIED PHYSICS LETTERS | 1963年 / 3卷 / 09期

关键词：

D O I：

10.1063/1.1753914

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：162 / 163

页数：2

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共 3 条

[1] EFFECT OF PRESSURE ON SPONTANEOUS AND STIMULATED EMISSION FROM GAAS [J].

FEINLEIB, J ;

GROVES, S ;

PAUL, W ;

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[2] THRESHOLD RELATIONS AND DIFFRACTION LOSS FOR INJECTION LASERS [J].

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IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (01) :58-61

[3] LINE WIDTHS AND PRESSURE SHIFTS IN MODE STRUCTURE OF STIMULATED EMISSION FROM GAAS JUNCTIONS [J].

STEVENSON, MJ ;

AXE, JD ;

LANKARD, JR .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1963, 7 (02) :155-156