BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL

被引:1
作者
CHANG, YH
YEH, JJ
SHEU, YM
WANG, CC
CHEN, TC
CHANG, KH
LEE, CP
机构
[1] AT&T BELL LABS, MURRAY HILL, NJ 07974 USA
[2] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN
关键词
D O I
10.1016/0038-1101(94)90273-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.
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页码:673 / 675
页数:3
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