PULSED EXCIMER AND ND-YAG LASER CRYSTALLIZATION OF A-SI-H - THE SPECIFIC ROLE OF HYDROGEN

被引：9

作者：

ELLIQ, M ^{[1
]}

FOGARASSY, E ^{[1
]}

STOQUERT, JP ^{[1
]}

FUCHS, C ^{[1
]}

DEUNAMUNO, S ^{[1
]}

PREVOT, B ^{[1
]}

PATTYN, H ^{[1
]}

机构：

[1] GRPM,F-67037 STRASBOURG,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1990年 / 46卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(90)90174-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the possibility of preparing good-quality polycrystalline silicon by laser crystallization of hydrogenated and non-hydrogenated amorphous silicon thin films deposited onto glass substrates. The morphology and surface roughness of the crystallized layer is shown to be a function of the laser fluence and especially of the hydrogen content for both pulsed excimer and scanned Nd:YAG lasers used in this study. © 1990.

引用

页码：378 / 382

页数：5

共 13 条

[1]

CHAING A, 1986, SEMICONDUCTOR INSULA, V53

[2] RAMAN-SPECTROSCOPY OF LOW-DIMENSIONAL SEMICONDUCTORS [J].