FORMATION OF BURIED EPITAXIAL CO SILICIDES BY ION-IMPLANTATION

被引:41
作者
KOHLHOF, K [1 ]
MANTL, S [1 ]
STRITZKER, B [1 ]
JAGER, W [1 ]
机构
[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER
关键词
D O I
10.1016/0168-583X(89)90786-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:276 / 279
页数:4
相关论文
共 10 条
[1]   FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J].
DHEURLE, FM ;
PETERSSON, CS .
THIN SOLID FILMS, 1985, 128 (3-4) :283-297
[2]  
KOHLHOF K, 1988, IN PRESS NATO ASI SE
[3]   KINETICS OF COSI2 FROM EVAPORATED SILICON [J].
LIEN, CD ;
NICOLET, MA ;
LAU, SS .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04) :249-251
[4]   ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J].
MEECHAN, CJ ;
BRINKMAN, JA .
PHYSICAL REVIEW, 1956, 103 (05) :1193-1202
[5]   TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J].
ROSENCHER, E ;
DELAGE, S ;
CAMPIDELLI, Y ;
DAVITAYA, FA .
ELECTRONICS LETTERS, 1984, 20 (19) :762-764
[6]  
SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439
[7]  
TUNG RT, 1986, MATER RES SOC S P, V67, P211
[8]   MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J].
WHITE, AE ;
SHORT, KT ;
DYNES, RC ;
GARNO, JP ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1987, 50 (02) :95-97
[9]  
WHITE AE, 1987, MATER RES SOC S P, V74, P481
[10]  
WHITE AE, 1988, MATER RES SOC S P, V100, P3