ELECTROLUMINESCENCE IN AN OXYGEN-DOPED ZNSE P-N-JUNCTION GROWN BY MOLECULAR-BEAM EPITAXY

被引:62
作者
AKIMOTO, K
MIYAJIMA, T
MORI, Y
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1989年 / 28卷 / 04期
关键词
D O I
10.1143/JJAP.28.L531
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L531 / L534
页数:4
相关论文
共 8 条
[1]  
AKIMOTO K, IN PRESS PHYS REV B
[2]   GROWTH OF P-TYPE ZNSE-LI BY MOLECULAR-BEAM EPITAXY [J].
CHENG, H ;
DEPUYDT, JM ;
POTTS, JE ;
SMITH, TL .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :147-149
[3]   ENERGY OF AN INTERSTITIAL DONOR IN ZNSE FROM PAIR SPECTRA [J].
NEUMARK, GF ;
HERKO, SP ;
MCGEE, TF ;
FITZPATRICK, BJ .
PHYSICAL REVIEW LETTERS, 1984, 53 (06) :604-607
[4]   BLUE-LIGHT EMISSION FROM ZNSE P-N-JUNCTIONS [J].
NISHIZAWA, J ;
ITOH, K ;
OKUNO, Y ;
SAKURAI, F .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2210-2216
[5]   P-TYPE CONDUCTION IN ZNSE GROWN BY TEMPERATURE DIFFERENCE METHOD UNDER CONTROLLED VAPOR-PRESSURE [J].
NISHIZAWA, J ;
SUZUKI, R ;
OKUNO, Y .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2256-2258
[6]   INJECTION ELECTROLUMINESCENCE IN PHOSPHOROUS-ION-IMPLANTED ZNSE P-N-JUNCTION DIODES [J].
PARK, YS ;
SHIN, BK .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1444-1446
[7]   BLUE ELECTROLUMINESCENCE FROM ZNSE DIODES [J].
YAMAGUCHI, M ;
YAMAMOTO, A ;
KONDO, M .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (01) :196-202
[8]   METALORGANIC VAPOR-PHASE EPITAXY OF LOW-RESISTIVITY P-TYPE ZNSE [J].
YASUDA, T ;
MITSUISHI, I ;
KUKIMOTO, H .
APPLIED PHYSICS LETTERS, 1988, 52 (01) :57-59