TRANSITION-METAL IMPURITIES IN SILICON - NEW DEFECT REACTIONS

被引：16
|
作者：
CZAPUTA, R
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1989年 / 49卷 / 04期
关键词：
D O I：
10.1007/BF00615028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：431 / 436
页数：6
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