GAAS-ALGAAS HALF-RING LASER FABRICATED BY DEEP ZN DIFFUSION

被引：4

作者：

KAWAGUCHI, H ^{[1
]}

KAWAKAMI, T ^{[1
]}

机构：

[1] NIPPON TELEG & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1977年 / 16卷 / 12期

关键词：

D O I：

10.1143/JJAP.16.2281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2281 / 2282

页数：2

共 8 条

[1] OPTICALLY PUMPED GAAS-GA1-XALXAS HALF-RING LASER FABRICATED BY LIQUID-PHASE EPITAXY OVER CHEMICALLY ETCHED CHANNELS [J].

BOTEZ, D ;

FIGUEROA, L ;

WANG, S .

APPLIED PHYSICS LETTERS, 1976, 29 (08) :502-504

[2] GAAS LASERS UTILIZING LIGHT PROPAGATION ALONG CURVED JUNCTIONS [J].

CARRAN, JH ;

DASARO, LA ;

DYMENT, JC ;

HERSKOWITZ, GJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1970, QE 6 (06) :367-+

[3]

MACATILI EAJ, 1969, BELL SYST TECH J, V48, P2103

[4] SEMICONDUCTOR-LASERS WITH BENT GUIDE OF PLANAR STRUCTURE [J].

MATSUMOTO, N ;

KAWAGUCHI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (10) :1885-1886

[5]

Matsumoto N., 1977, Japanese Journal of Applied Physics, V16, P1395, DOI 10.1143/JJAP.16.1395

[6]

NAMIZAKI H, 1976, T IECE JAPAN, V59, P8

[7]

PANISH MB, 1974, APPLIED SOLID STATE, V4, P280

[8] NEW STRIPE GEOMETRY LASER WITH HIGH-QUALITY LASING CHARACTERISTICS BY HORIZONTAL TRANSVERSE MODE STABILIZATION - REFRACTIVE-INDEX GUIDING WITH ZN DOPING [J].

YONEZU, H ;

MATSUMOTO, Y ;

SHINOHARA, T ;

SAKUMA, I ;

SUZUKI, T ;

KOBAYASHI, K ;

LANG, R ;

NANNICHI, Y ;

HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (01) :209-210

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