MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES

被引：36
作者：
REDFIELD, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期
关键词：
D O I：
10.1063/1.90426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：531 / 533
页数：3
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