MECHANISM OF PERFORMANCE LIMITATIONS IN HEAVILY DOPED SILICON DEVICES

被引：36
作者：
REDFIELD, D
机构：
来源：
APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期
关键词：
D O I：
10.1063/1.90426
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：531 / 533
页数：3
相关论文
共 16 条
[1]  
BRANDHORST HW, 1972, 9TH P IEEE PHOT SPEC, P37
[2]   AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J].
DZIEWIOR, J ;
SCHMID, W .
APPLIED PHYSICS LETTERS, 1977, 31 (05) :346-348
[3]   OPTICAL PROPERTIES OF HEAVILY DOPED COMPENSATED GERMANIUM [J].
FOWLER, AB ;
HOWARD, WE ;
BROCK, GE .
PHYSICAL REVIEW, 1962, 128 (04) :1664-&
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[5]  
Lindholm F. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P1
[6]  
LINDMAYER J, 1965, FUNDAMENTALS SEMICON, P123
[7]  
Lindmayer J, 1973, COMSAT TECH REV, V3, P1
[8]   CALCULATION OF EMITTER EFFICIENCY OF BIPOLAR TRANSISTORS [J].
MERTENS, RP ;
DEMAN, HJ ;
VANOVERS.RJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (09) :772-778
[9]  
PANKOVE JI, 1965, PHYS REV, V140, P2059
[10]  
POPOVIC RS, UNPUBLISHED
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