PROPERTIES OF LIQUID-PHASE EPITAXIAL GE-DOPED GAAS

被引：14

作者：

NEUMANN, H ^{[1
]}

JACOBS, K ^{[1
]}

VANNAM, N ^{[1
]}

KOJ, W ^{[1
]}

KRAUSE, C ^{[1
]}

机构：

[1] KARL MARX UNIV,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 44卷 / 02期

关键词：

D O I：

10.1002/pssa.2210440233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：675 / 678

页数：4

共 25 条

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[8]

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[9] PROPERTIES OF LIQUID-PHASE EPITAXIAL GAAS GROWN FROM TIN SOLUTION [J].

NEUMANN, H ;

JACOBS, K ;

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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 32 (02) :497-502

[10]

NEUMANN HG, UNPUBLISHED

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