BEHAVIOR OF ION-IMPLANTED JUNCTION DIODES IN 3C SIC

被引：22

作者：

AVILA, RE ^{[1
]}

KOPANSKI, JJ ^{[1
]}

FUNG, CD ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,CASE INST TECHNOL,DEPT ELECT ENGN,CLEVELAND,OH 44106

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339291

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3469 / 3471

页数：3

共 13 条

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[2]

BLANK JM, 1974, SILICON CARBIDE 1973, P550

[3] DIODES IN SILICON CARBIDE BY ION IMPLANTATION [J].

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MARSH, OJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :311-+

[4] 3C-SIC P-N-JUNCTION DIODES [J].

FURUKAWA, K ;

UEMOTO, A ;

SHIGETA, M ;

SUZUKI, A ;

NAKAJIMA, S .

APPLIED PHYSICS LETTERS, 1986, 48 (22) :1536-1537

[5]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[6]

KEYES RW, 1974, SILICON CARBIDE 1973, P534

[7] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES [J].

NISHINO, S ;

POWELL, JA ;

WILL, HA .

APPLIED PHYSICS LETTERS, 1983, 42 (05) :460-462

[8] ANTIPHASE BOUNDARIES IN EPITAXIALLY GROWN BETA-SIC [J].

PIROUZ, P ;

CHOREY, CM ;

POWELL, JA .

APPLIED PHYSICS LETTERS, 1987, 50 (04) :221-223

[9]

POTTER RM, 1969, MAT RES B, V4, pS223

[10]

RYU J, 1986, MATER RES SOC S P, V52, P165

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