INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：55
作者：
SKOLNICK, MS
TAYLOR, LL
BASS, SJ
PITT, AD
MOWBRAY, DJ
CULLIS, AG
CHEW, NG
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 01期
关键词：
D O I：
10.1063/1.98893
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：24 / 26
页数：3
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[1]   EFFECT OF GROWTH TEMPERATURE ON THE OPTICAL, ELECTRICAL AND CRYSTALLOGRAPHIC PROPERTIES OF EPITAXIAL INDIUM GALLIUM-ARSENIDE GROWN BY MOCVD IN AN ATMOSPHERIC-PRESSURE REACTOR [J].
BASS, SJ ;
BARNETT, SJ ;
BROWN, GT ;
CHEW, NG ;
CULLIS, AG ;
PITT, AD ;
SKOLNICK, MS .
JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :378-385
[2]   MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS [J].
BASS, SJ ;
SKOLNICK, MS ;
CHUDZYNSKA, H ;
SMITH, L .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :221-226
[3]   GROWTH AND CHARACTERIZATION OF QUANTUM-WELLS AND SELECTIVELY DOPED HETEROSTRUCTURES OF INP/GA0.47IN0.53AS GROWN BY SOLID SOURCE MBE [J].
CLAXTON, PA ;
ROBERTS, JS ;
DAVID, JPR ;
SOTOMAYORTORRES, CM ;
SKOLNICK, MS ;
TAPSTER, PR ;
NASH, KJ .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :288-295
[4]   RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS [J].
FORREST, SR ;
SCHMIDT, PH ;
WILSON, RB ;
KAPLAN, ML .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1199-1201
[5]   OPTICAL AND CRYSTALLOGRAPHIC PROPERTIES AND IMPURITY INCORPORATION OF GAXIN1-XAS (0.44 LESS-THAN X LESS-THAN 0.49) GROWN BY LIQUID-PHASE EPITAXY, VAPOR-PHASE EPITAXY, AND METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
GOETZ, KH ;
BIMBERG, D ;
JURGENSEN, H ;
SELDERS, J ;
SOLOMONOV, AV ;
GLINSKII, GF ;
RAZEGHI, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4543-4552
[6]   EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].
KUO, CP ;
VONG, SK ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432
[7]   HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
MILLER, BI ;
SCHUBERT, EF ;
KOREN, U ;
OURMAZD, A ;
DAYEM, AH ;
CAPIK, RJ .
APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386
[8]   OPTICAL-PROPERTIES OF VERY THIN GAINAS(P)/INP QUANTUM-WELLS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J].
PANISH, MB ;
TEMKIN, H ;
HAMM, RA ;
CHU, SNG .
APPLIED PHYSICS LETTERS, 1986, 49 (03) :164-166
[9]   ROOM-TEMPERATURE EXCITONS IN GA0.47IN0.53AS-INP SUPERLATTICES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
NAGLE, J ;
MAUREL, P ;
OMNES, F ;
POCHOLLE, JP .
APPLIED PHYSICS LETTERS, 1986, 49 (17) :1110-1111
[10]   GROWTH OF GA0.47IN0.53AS-INP QUANTUM WELLS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
HIRTZ, JP ;
ZIEMELIS, UO ;
DELALANDE, C ;
ETIENNE, B ;
VOOS, M .
APPLIED PHYSICS LETTERS, 1983, 43 (06) :585-587
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