TRIGGER ELEMENTS USING CAPACITANCE OF A P-N JUNCTION

被引：0
|
作者：
CHERKASH.AG
机构：
来源：
TELECOMMUNICATIONS AND RADIO ENGINEER-USSR | 1967年 / 08期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：126 / &
相关论文
共 50 条
  • [21] Profiling of the p-n junction in silicon by the electrochemical capacitance-voltage technique
    Kinder, R
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1998, 169 (02): : 261 - 265
  • [22] Video solitons in a dispersive transmission line with the nonlinear capacitance of a p-n junction
    D. Ch. Kim
    Technical Physics, 2013, 58 : 340 - 350
  • [23] AN ANALYSIS OF FREQUENCY DEPENDENCE OF CAPACITANCE OF ABRUPT P-N JUNCTION SEMICONDUCTOR DEVICES
    OHEARN, WF
    CHANG, YF
    SOLID-STATE ELECTRONICS, 1970, 13 (04) : 473 - &
  • [24] Topological p-n junction
    Wang, Jing
    Chen, Xi
    Zhu, Bang-Fen
    Zhang, Shou-Cheng
    PHYSICS OF SEMICONDUCTORS, 2013, 1566 : 187 - +
  • [25] Topological p-n junction
    Wang, Jing
    Chen, Xi
    Zhu, Bang-Fen
    Zhang, Shou-Cheng
    PHYSICAL REVIEW B, 2012, 85 (23):
  • [26] P-N JUNCTION TRANSISTORS
    SHOCKLEY, W
    SPARKS, M
    TEAL, GK
    PHYSICAL REVIEW, 1951, 83 (01): : 151 - 162
  • [27] P-N JUNCTION LASERS
    BURNS, G
    NATHAN, MI
    PROCEEDINGS OF THE IEEE, 1964, 52 (07) : 770 - +
  • [28] SPACE-CHARGE LAYER WIDTH AND JUNCTION CAPACITANCE OF A HYPER-ABRUPT P-N JUNCTION
    NUKUSHINA, H
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (06) : 941 - &
  • [29] p-n and p-n-p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study
    Medvedkin, GA
    Sobolev, MM
    Solovjev, SA
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) : 5167 - 5175
  • [30] p-n and p-n-p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study
    Medvedkin, G.A.
    Sobolev, M.M.
    Solovjev, S.A.
    1997, American Institute of Physics Inc. (82)
12345