A MECHANISM FOR TWIN FORMATION DURING CZOCHRALSKI AND ENCAPSULATED VERTICAL BRIDGMAN GROWTH OF III-V COMPOUND SEMICONDUCTORS

被引：132
作者：
HURLE, DTJ
机构：
[1] H.H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, Tyndall Avenue
来源：
JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 3-4期
关键词：
D O I：
10.1016/0022-0248(94)00666-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Conditions are derived for which nucleation in twin orientation on an ''edge'' facet during the Czochralski growth of semiconductors is thermodynamically favoured over nucleation in the correct orientation. The model is based on ideas presented by Voronkov [Sov. Phys.-Cryst. 19 (1975) 573] concerning the conditions necessary for the edge facets to be anchored at the three phase boundary. It is shown that the conditions are satisfied for GaAs, InP and InSb but not for Ge and Si. The main features of twinning in the III-V compounds are accounted for and predicted conditions for the avoidance of twinning are listed.
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页码：239 / 250
页数：12
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