DRIFT MOBILITY IN UNDOPED HYDROGENATED A-SILICON

被引：0
|
作者：
NIELSEN, P [1 ]
DALAL, VL [1 ]
机构：
[1] UNIV DELAWARE,NEWARK,DE 19711
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1981年 / 26卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：313 / 313
页数：1
相关论文
共 50 条
  • [41] PROPERTIES AND APPLICATION OF UNDOPED HYDROGENATED MICROCRYSTALLINE SILICON THIN-FILMS
    KANICKI, J
    HASAN, E
    KOTECKI, DF
    TAKAMORI, T
    GRIFFITH, JH
    AMORPHOUS SILICON TECHNOLOGY - 1989, 1989, 149 : 173 - 179
  • [42] DEFECT EQUILIBRATION AND INTRINSIC STRESS IN UNDOPED HYDROGENATED AMORPHOUS-SILICON
    KITSUNO, Y
    CHO, GS
    DREWERY, J
    HONG, WS
    PEREZMENDEZ, V
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (3A): : 1261 - 1267
  • [43] ELECTRON-SPIN RESONANCE IN A-SILICON
    VOGETGROTE, U
    STUKE, J
    WAGNER, H
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (03): : 460 - 460
  • [44] LIGHT-INDUCED EFFECTS ON DOPED-HYDROGENATED AND UNDOPED-HYDROGENATED AMORPHOUS-SILICON
    PARK, JS
    HAN, MK
    LEE, CH
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (04) : 2107 - 2112
  • [45] Crystalline Silicon Growth in Nickel/a-Silicon Bilayer
    Mohiddon, Md Ahamad
    Naidu, K. Lakshun
    Dalba, G.
    Rocca, F.
    Krishna, M. Ghanashyam
    SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 686 - 687
  • [46] Mercury-sensitized hydrogen radical photoetching of undoped hydrogenated amorphous silicon and crystalline silicon
    Nozaki, Hidetoshi, 1708, (28):
  • [47] Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated silicon
    Corey, R.L.
    Kernan, M.J.
    Leopold, D.J.
    Fedders, P.A.
    Norberg, R.E.
    Turner, W.A.
    Paul, W.
    Journal of Non-Crystalline Solids, 1996, 198-200 (pt 1) : 65 - 68
  • [48] Stability of the number of silicon-hydrogen bonds upon photoillumination of undoped amorphous hydrogenated silicon
    Corey, RL
    Kernan, MJ
    Leopold, DJ
    Fedders, PA
    Norberg, RE
    Turner, WA
    Paul, W
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 65 - 68
  • [49] SUBSTRATE-TEMPERATURE DEPENDENCE OF ELECTRON-DRIFT MOBILITY IN GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON
    SHIRAFUJI, J
    KUWAGAKI, M
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L184 - L186
  • [50] Carrier drift mobility in porous silicon carbide
    Kazakova, LP
    Mynbaeva, MG
    Mynbaev, KD
    SEMICONDUCTORS, 2004, 38 (09) : 1081 - 1083
12345